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g d s gate drain source target applications ? wireless charging ? adapter ? telecom base part number package type standard pack form quantity IRL100HS121 pqfn 2mm x 2mm tape and reel 4000 IRL100HS121 orderable part number v dss v gs 100v min. 20v max q g tot q gd 3.7nc 1.6nc r ds(on) (max . ) 42m ?? @ 10v v gs(th) 1.7v final datasheet please read the important notice and warnings at the end of this document v1.3 www.infineon.com 2017-10-06 IRL100HS121 ? figure 1 typical on-resistance vs. gate voltage figure 2 typical on-resistance vs. drain current typical values (unless otherwise specified ) pqfn 2 mm x 2 mm ? ? top view g 3 s d2 d1 4s 5d 6d d 0 4 8 12 16 20 24 i d , drain current (a) 20 40 60 80 100 typical r ds(on) (m ? ) vgs = 4.0v vgs = 4.5v vgs = 5.0v vgs = 6.0v vgs = 7.0v vgs = 10v benefits ? higher power density designs ? higher switching frequency ? ir mosfet - uses optimos tm 5 chip ? reduced parts count wherever 5v supplies are available ? driven directly from microcontrollers (slow switching) ? system cost reductions 3 4 5 6 7 8 9 10 11 12 v gs, gate -to -source voltage (v) 10 20 30 40 50 60 70 80 90 100 110 120 r ds(on) , drain-to -source on resistance (m ? ) i d = 6.7a t j = 25c t j = 125c
final datasheet v1.3 2017-10-06 IRL100HS121 2 ? table of contents table of contents target applications ?..??..??..???????????????????????????...??1 benefits ?..???????????????????????????...?????..?????.1 ordering table ?.??????????????????????????????????????1 table of contents ?.????????????????????????????????????...2 1 parameters ????????????????????????????????????3 2 maximum ratings, therma l, and avalanche characteristics ???????????????4 3 electrical characteristics ??????????????????????????????5 4 electrical ch aracteristic diagrams ??????????????????????????6 package information ????????????????????????????????????12 qualification information ???????????????????????????????????14 revision history ??????????????????????????????????..????15
final datasheet v1.3 2017-10-06 IRL100HS121 3 ? 1 parameters table1 key performance parameters parameter values units v ds ? 100 v r ds(on) max ? 42 m ? i d @ t c = 25c 11 a i d @ t a = 25c 5.1 a parameters
final datasheet v1.3 2017-10-06 IRL100HS121 4 ? table 2 maximum ratings (at t j = 25 c, unless otherwise specified) parameter symbol conditions values unit continuous drain current (silicon limited) ?? i d t c (bottom) = 25c, v gs @ 10v 11 a continuous drain current (silicon limited) ? i d t c (bottom) = 100c, v gs @ 10v 7.8 continuous drain current (silicon limited) ? (source bonding technologies limited) i d t c (bottom) = 25c, v gs @ 10v 10.2 continuous drain current (silicon limited) ? i d t a = 25c, v gs @ 10v 5.1 pulsed drain current ? i dm t c (bottom) = 25c 41 maximum power dissipation p d t c (bottom) = 25c 11.5 w maximum power dissipation p d t c (bottom) = 100c 5.8 maximum power dissipation p d t a = 25c 2.5 gate-to-source voltage v gs - 20 v peak soldering temperature t p - 270 c ? operating junction and t j ,t stg -55 to + 175 storage temperature range - table 4 avalanche characteristics parameter symbol values unit single pulse avalanche energy ? e as 13 mj ? avalanche current ? i ar 5.0 a table 3 thermal characteristics parameter symbol conditions min. typ. max. unit junction-to-case (bottom) ? r ? jc - - - 13 c/w junction-to-case (top) ? r ? jc - - - 90 junction-to-ambient ? r ? ja - - - 60 junction-to-ambient ? r ? ja (<10s) - - - 42 2 maximum ratings and thermal characteristics maximum ratings and thermal characteristics notes: ?? repetitive rating; pulse width limi ted by max. junction temperature. ?? starting t j = 25c, l = 1.0mh, r g = 50 ? , i as = 5.0a based on test data. ?? pulse width 400s; duty cycle 2%. ?? r ? is measured at t j of approximately 90c. ?? when mounted on a 1 inch sq uare pcb (fr-4). please refer to an-994 for more details. ?? calculated continuous current based on maximum allowable junction temperature. ?? current is limited to 10.2a by source bonding technology.
final datasheet v1.3 2017-10-06 IRL100HS121 5 ? d s g table 6 dynamic characteristics parameter symbol conditions values unit min. typ. max. forward trans co nductance gfs v ds = 25v, i d = 6.7a 15 - - s total gate charge q g i d = 6.7a v ds = 50v v gs = 4.5v see fig.8 - 3.7 5.6 nc pre-vth gate-to-source charge q gs1 - 0.8 - post-vth gate-to-source charge q gs2 - 0.5 - gate-to-drain charge q gd - 1.6 - gate charge overdrive q godr - 0.8 - switch charge (qgs2 + qgd) q sw - 2.1 - output charge q oss v ds = 50v ,v gs = 0v - 9.5 - nc turn-on delay time t d(on) v dd = 50v - 7.6 - rise time t r i d = 6.7a - 21 - turn-o ff delay time t d(o ff ) r g = 2.7 ? - 8.7 - fall time t f v gs = 4.5v ? - 10.7 - input capacitance c iss v gs = 0v - 440 - pf output capacitance c oss v ds = 50v - 80 - reverse transfer capacitance c rss ? = 1.0mhz - 6.3 - output capacitance c oss v gs = 0v, v ds = 1.0v, ? = 1.0mhz - 330 - output capacitance c oss v gs = 0v, v ds = 80v, ? = 1.0mhz - 60 - ns ? table 7 reverse diode parameter symbol conditions values unit min. typ. max. continuous source current i s mosfet symbol - - 11 a (body diode) ?? showing the pulsed source current i sm integral reverse - - 41 (body diode) ? p-n junction diode. diode forward voltage v sd t j = 25c, i s = 6.7a,v gs = 0v ? - - 1.2 v reverse recovery time t rr t j = 25c, i f = 6.7a, v dd = 50v - 22 - ns reverse recovery charge q rr di/dt = 100a/s - 28 - nc table 5 static characteristics parameter symbol conditions values unit min. typ. max. drain-to-source breakdown voltage v (br)dss v gs = 0v, i d = 250a 100 - - v breakdown voltage temp. coe ff icient ?v (br)dss /?t j reference to 25c, i d = 1ma - 44 - mv/c static drain-to-source on-resistance v gs = 10v, i d = 6.7a ? - 34 42 m ? v gs = 4.5v, i d = 3.4a ? - 45 59 gate threshold voltage v gs(th) v ds = v gs , i d = 10a 1.1 1.7 2.3 v gate threshold voltage temp. coe ff icient ?v gs(th) / ?t j - -5.6 - mv/c drain-to-source leakage current i dss v ds = 80v, v gs = 0v - - 1.0 a gate-to-source forward leakage i gss v gs = 20v - - 100 na ? i gss v gs = -20v - - 100 gate resistance r g - - 0.9 - ?? r ds(on) 3 electrical characteristics electrical characteristics
final datasheet v1.3 2017-10-06 IRL100HS121 6 ? electrical characteristic diagrams 4 electrical characteristic diagrams figure 3 typical output characteristics figure 4 typical output characteristics figure 5 typical transfer characteristics figure 6 normalized on-resistance vs. temperature ? ? -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.4 0.8 1.2 1.6 2.0 2.4 r ds(on) , drain-to-source on resistance (normalized) i d = 6.7a v gs = 10v 2 3 4 5 6 v gs , gate-to-source voltage (v) 1 10 100 i d , drain-to-source current (a) t j = 25c t j = 175c v ds = 25v ?? 60s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , drain-to-source current (a) vgs top 12v 10v 4.5v 4.0v 3.5v 3.3v 3.0v bottom 2.7v ?? 60s pulse width tj = 25c 2.7v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , drain-to-source current (a) vgs top 12v 10v 4.5v 4.0v 3.5v 3.3v 3.0v bottom 2.7v ?? 60s pulse width tj = 175c 2.7v
final datasheet v1.3 2017-10-06 IRL100HS121 7 ? electrical characteristic diagrams figure 7 typical capacitance vs. drain-to-source voltage figure 8 typical gate charge vs. gate-to-source voltage figure 9 typical source-drain diode forward voltage figure 10 maximum safe operating area ? ? 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0246810 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v gs , gate-to-source voltage (v) v ds = 80v v ds = 50v v ds = 20v i d = 6.7a 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc limited by package
final datasheet v1.3 2017-10-06 IRL100HS121 8 ? electrical characteristic diagrams figure 11 maximum drain current vs. case temperature figure 12 typical threshold voltage vs. junction temperature figure 13 maximum avalanche energy vs. drain current ? 25 50 75 100 125 150 175 t c , case temperature (c) 0 2 4 6 8 10 12 i d , d r a i n c u r r e n t ( a ) limited by package ? -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 10a i d = 250a i d = 1.0ma i d = 1.0a 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 10 20 30 40 50 60 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.1a 1.7a bottom 5.0a
final datasheet v1.3 2017-10-06 IRL100HS121 9 ? electrical characteristic diagrams figure 14 typical avalanche current vs. pulse width figure 15 maximum e ff ective transient thermal impedance, junction-to-case ? ? 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.01 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj =25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse)
final datasheet v1.3 2017-10-06 IRL100HS121 10 electrical characteristic diagrams figure 16 peak diode recovery dv/dt test circuit for n-channel power mosfets ? figure 17a gate charge test circuit figure 17b gate charge waveform ?
final datasheet v1.3 2017-10-06 IRL100HS121 11 electrical characteristic diagrams figure 18a unclamped inductive test circuit figure 18b unclamped inductive waveforms ? figure 19a switching time test circuit figure 19b switching time waveforms ?
final datasheet v1.3 2017-10-06 IRL100HS121 12 package information 5 package information pqfn 2 x 2 outline package details note: for the most current drawing please refer to website at : www.irf.com/package/ pqfn 2 x 2 part marking 100hs121 ? ?
final datasheet v1.3 2017-10-06 IRL100HS121 13 package information note: for the most current drawing please refer to website at : www.irf.com/package/ pqfn 2 x 2 tape and reel
final datasheet v1.3 2017-10-06 IRL100HS121 14 ? applicable version of jedec standa rd at the time of product release. ? qualification information qualification level industrial (per jedec jesd47f) ? moisture sensitivity level pqfn 2 mm x 2 mm msl1 (per jedec j-std-020d) ? rohs compliant yes qualification information 6 qualification information
final datasheet v1.3 2017-10-06 IRL100HS121 15 revision history revision history major changes since the last revision page or reference revision date description of changes all pages 1.0 2015-12-03 ?? first release data sheet as provisional. all page 1.1 2016-09-12 ?? updated datasheet with revised package picture and outline drawings. ?? datasheet is released as provisional. all pages 1.3 2017-08-21 ?? parts tested as unique datasheet with revised current and all other tests ?? updated ds in new infineon template ?? added link for package info rmation?pages 12, 13 ?? added ir?pqfn 2x2 package picture?page 1 ?? datasheet completed as approved not released. ?? datasheet is w/o ?approved not released? all pages 1.2 2016-10-17 ?? added switch time test data. ?? datasheet is released as provisional. all pages 1.3 2017-10-06 ?? first release data sheet on web.
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